Achieving metal-like catalysis from semiconductor for on-surface synthesis

Free of posttransfer, on-surface synthesis (OSS) of single-atomic-layer nanostructures directly on semiconductors holds considerable potential for next-generation devices. However, due to the high diffusion barrier and abundant defects on semiconductor surfaces, extended and well-defined OSS on semiconductors has major difficulty. Furthermore, given semiconductors’ limited thermal catalytic activity, initiating high-barrier reactions remains a significant challenge. Herein, using TiO₂(011) as a prototype, we present an effective strategy for steering the molecule adsorption and reaction processes on semiconductors, delivering lengthy graphene nanoribbons with extendable widths. By introducing interstitial titanium (Ti_int) and oxygen vacancies (O_v), we convert TiO₂(011) from a passive supporting template into a metal-like catalytic platform. This regulation shifts electron density and surface dipoles, resulting in tunable catalytic activity together with varied molecule adsorption and diffusion. Cyclodehydrogenation, which is inefficient on pristine TiO₂(011), is markedly improved on Ti_int/O_v-doped TiO₂. Even interribbon cyclodehydrogenation is achieved. The final product’s dimensions, quality, and coverage are all controllable. Ti_int doping outperforms O_v in producing regular and prolonged products, whereas excessive Ti_int compromises molecule landing and coupling. This work demonstrates the crucial role of semiconductor substrates in OSS and advances OSS on semiconductors from an empirical trial-and-error methodology to a systematic and controllable paradigm.