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Achieving high power factor and output power density in p-type half-Heuslers Nb1-xTixFeSb

  • Ran He
  • , Daniel Kraemer
  • , Jun Mao
  • , Lingping Zeng
  • , Qing Jie
  • , Yucheng Lan
  • , Chunhua Li
  • , Jing Shuai
  • , Hee Seok Kim
  • , Yuan Liu
  • , David Broido
  • , Ching Wu Chu*
  • , Gang Chen
  • , Zhifeng Ren
  • *Corresponding author for this work
  • University of Houston
  • Massachusetts Institute of Technology
  • Morgan State University
  • Boston College
  • Lawrence Berkeley National Laboratory

Research output: Contribution to journalArticlepeer-review

Abstract

Improvements in thermoelectric material performance over the past two decades have largely been based on decreasing the phonon thermal conductivity. Enhancing the power factor has been less successful in comparison. In this work, a peak power factor of ∼106 μW·cm-1·K-2 is achieved by increasing the hot pressing temperature up to 1,373 K in the p-type half-Heusler Nb0.95 Ti0.05 FeSb. The high power factor subsequently yields a record output power density of ∼22 W·cm-2 based on a single-leg device operating at between 293 K and 868 K. Such a high-output power density can be beneficial for large-scale power generation applications.

Original languageEnglish
Pages (from-to)13576-13581
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume113
Issue number48
DOIs
StatePublished - 29 Nov 2016
Externally publishedYes

Keywords

  • Carrier mobility
  • Half-Heusler
  • Output power density
  • Power factor
  • Thermoelectric

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