Abstract
Conventional gate drive (CGD) strategies for insulatedgate bipolar transistors (IGBTs) face challenges in balancing switching losses with voltage and current spikes. Active gate drivers (AGD), on the other hand, can be controlled in stages to suppress these spikes and minimize switching losses. In this paper, we propose a new driving circuit - a variable bypass current source driver circuit based on reference voltage (VBCD), which uses the reference voltage to adjust the current magnitude of the bypass current source, thereby controlling the switching transient of the IGBT state. Experimental results show that under the same conditions, VBCD can reduce switching losses, suppress voltage and current spikes, and maximize the performance of IGBT devices compared with CGD.
| Original language | English |
|---|---|
| Title of host publication | PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings |
| Publisher | VDE Verlag GmbH |
| Pages | 84-89 |
| Number of pages | 6 |
| ISBN (Electronic) | 9783800761326 |
| DOIs | |
| State | Published - 2023 |
| Event | 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023 - Shanghai, China Duration: 29 Aug 2023 → 31 Aug 2023 |
Publication series
| Name | PCIM Asia 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Conference Proceedings |
|---|
Conference
| Conference | 2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Asia 2023 |
|---|---|
| Country/Territory | China |
| City | Shanghai |
| Period | 29/08/23 → 31/08/23 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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