A study of electric properties of single-junction GaAs solar cells irradiated by low-energy protons

Huijie Zhao; Yiyong Wu; Shiyu He; Sun Yanzheng; Sun Qiang; Lu Wei; Xiao ZhiBin; Huang Caiyong

doi:10.1063/1.3076881

A study of electric properties of single-junction GaAs solar cells irradiated by low-energy protons

Huijie Zhao^*
, Yiyong Wu
, Shiyu He
, Sun Yanzheng
, Sun Qiang
, Lu Wei
, Xiao ZhiBin
, Huang Caiyong

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Tianjin Institute of Power Sources

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The effects of low-energy proton irradiation on the electrical property of GaAs/Ge solar cells used in space applications are studied. The protons energy in the experiment was selected in the range of 70-170 keV with a fluence of up to 3 × 10¹² cm^-2. The results indicate that under the experimental conditions, the electrical properties such as the short circuit current (Isc), the open circuit voltage (Voc) and the maximum power (Pmax) of the GaAs/Ge solar cells decrease with increasing proton fluence. Increasing the proton energy can result in more serious damage to the solar cell. The proton irradiation can also reduce the filling factor (Ff) of the I-V curves of the cells. A mechanism of the irradiation damage of GaAs solar cell is discussed.

Original language	English
Pages (from-to)	650-656
Number of pages	7
Journal	AIP Conference Proceedings
Volume	1087
DOIs	https://doi.org/10.1063/1.3076881
State	Published - 2009
Event	9th International Conference on Protection of Materials and Structures From Space Environment, ICPMSE-9 - Toronto, ON, Canada Duration: 20 May 2008 → 23 May 2008

Keywords

GaAs/Ge solar cell
Proton irradiation

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10.1063/1.3076881

Cite this

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title = "A study of electric properties of single-junction GaAs solar cells irradiated by low-energy protons",

abstract = "The effects of low-energy proton irradiation on the electrical property of GaAs/Ge solar cells used in space applications are studied. The protons energy in the experiment was selected in the range of 70-170 keV with a fluence of up to 3 × 1012 cm-2. The results indicate that under the experimental conditions, the electrical properties such as the short circuit current (Isc), the open circuit voltage (Voc) and the maximum power (Pmax) of the GaAs/Ge solar cells decrease with increasing proton fluence. Increasing the proton energy can result in more serious damage to the solar cell. The proton irradiation can also reduce the filling factor (Ff) of the I-V curves of the cells. A mechanism of the irradiation damage of GaAs solar cell is discussed.",

keywords = "GaAs/Ge solar cell, Proton irradiation",

author = "Huijie Zhao and Yiyong Wu and Shiyu He and Sun Yanzheng and Sun Qiang and Lu Wei and Xiao ZhiBin and Huang Caiyong",

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doi = "10.1063/1.3076881",

language = "英语",

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pages = "650--656",

journal = "AIP Conference Proceedings",

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note = "9th International Conference on Protection of Materials and Structures From Space Environment, ICPMSE-9 ; Conference date: 20-05-2008 Through 23-05-2008",

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TY - JOUR

T1 - A study of electric properties of single-junction GaAs solar cells irradiated by low-energy protons

AU - Zhao, Huijie

AU - Wu, Yiyong

AU - He, Shiyu

AU - Yanzheng, Sun

AU - Qiang, Sun

AU - Wei, Lu

AU - ZhiBin, Xiao

AU - Caiyong, Huang

PY - 2009

Y1 - 2009

N2 - The effects of low-energy proton irradiation on the electrical property of GaAs/Ge solar cells used in space applications are studied. The protons energy in the experiment was selected in the range of 70-170 keV with a fluence of up to 3 × 1012 cm-2. The results indicate that under the experimental conditions, the electrical properties such as the short circuit current (Isc), the open circuit voltage (Voc) and the maximum power (Pmax) of the GaAs/Ge solar cells decrease with increasing proton fluence. Increasing the proton energy can result in more serious damage to the solar cell. The proton irradiation can also reduce the filling factor (Ff) of the I-V curves of the cells. A mechanism of the irradiation damage of GaAs solar cell is discussed.

AB - The effects of low-energy proton irradiation on the electrical property of GaAs/Ge solar cells used in space applications are studied. The protons energy in the experiment was selected in the range of 70-170 keV with a fluence of up to 3 × 1012 cm-2. The results indicate that under the experimental conditions, the electrical properties such as the short circuit current (Isc), the open circuit voltage (Voc) and the maximum power (Pmax) of the GaAs/Ge solar cells decrease with increasing proton fluence. Increasing the proton energy can result in more serious damage to the solar cell. The proton irradiation can also reduce the filling factor (Ff) of the I-V curves of the cells. A mechanism of the irradiation damage of GaAs solar cell is discussed.

KW - GaAs/Ge solar cell

KW - Proton irradiation

UR - https://www.scopus.com/pages/publications/63849154714

U2 - 10.1063/1.3076881

DO - 10.1063/1.3076881

M3 - 会议文章

AN - SCOPUS:63849154714

SN - 0094-243X

VL - 1087

SP - 650

EP - 656

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

T2 - 9th International Conference on Protection of Materials and Structures From Space Environment, ICPMSE-9

Y2 - 20 May 2008 through 23 May 2008

ER -

A study of electric properties of single-junction GaAs solar cells irradiated by low-energy protons

Abstract

Keywords

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