Abstract
To suppress transient voltage spikes across the ac-side MOSFET in cycloconverter-based dc-ac converters, this article proposes a secondary-side modulation (SSM) method that synchronizes MOSFET turn-off with the channel current zero-crossing. This synchronization minimizes body-diode conduction time, thereby suppressing the transient voltage spikes. The method enhances design flexibility by enabling the use of Si MOSFETs with lower breakdown voltage and lower on-resistance, while relaxing constraints on transformer leakage inductance - all without additional clamping circuits. Experimental results on a 300 W prototype demonstrate a 110 V reduction in peak transient voltage with a 950 V Si MOSFET. The suppressed voltage stress further allows for the adoption of a 650 V Si MOSFET, achieving a peak efficiency of 94.18% at 110 V/50 Hz output. Thus, the proposed SSM offers an efficient and cost-effective solution for cycloconverter-based dc-ac converters in photovoltaic and other industrial applications.
| Original language | English |
|---|---|
| Pages (from-to) | 5397-5408 |
| Number of pages | 12 |
| Journal | IEEE Transactions on Industrial Electronics |
| Volume | 73 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2026 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Cycloconverter
- dc-ac converter
- reverse-recovery current
- secondary-side modulation
- transient voltage spikes
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