A pulse-current junction calibration method for power SiC MOSFET

Junction temperature calibration of power devices is important for estimating the junction temperature. In this paper, a pulse-current calibration method is proposed as a means of improving the efficiency of temperature calibration, utilizing the on-state voltage of SiC MOSFET as a calibration parameter. Firstly, the junction temperature calibration platform is constructed and a suitable parameter acquisition system is implemented. Subsequently, the corresponding calibration strategy and experimental flow are proposed, and the calculation of bus capacitance and inductance is given. Ultimately, the self-heating of the SiC MOSFET during the calibration is evaluated quantificationally. The results demonstrate that the self-heating effects associated with the proposed calibration method are negligible, thereby confirming the feasibility of the proposed strategy. Furthermore, the method is capable of acquiring a substantial amount of data in a single experimental test, which markedly enhances the efficiency of the calibration process.