Abstract
Chemical micro-machining of complex 3-dimensional (3-D) patterns of silicon substrates was preliminarily explored by the confined etchant layer technique (CELT). Through systematic investigation, we demonstrated that cysteine as a scavenger and Br2 as an etchant can be used to etch silicon substrates. The CELT has the potential to develop into a new means of micro-machining complex 3-D patterns on silicon substrates. However, due to the highly corrosive property of the chemicals used for the silicon etched system, great effort must be made to overcome these problems including the mold electrode with high chemical stability.
| Original language | English |
|---|---|
| Pages (from-to) | 398-402 |
| Number of pages | 5 |
| Journal | Journal of Solid State Electrochemistry |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2005 |
Keywords
- Confined etchant layer technique
- Cysteine
- Etching
- Micro-machining
- Silicon
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