A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors

Jianzhen Qu; Yifan Yu; Qianfan Zhang; Shumei Cui

doi:10.1109/ICIEA48937.2020.9248117

A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors

Jianzhen Qu
, Yifan Yu
, Qianfan Zhang
, Shumei Cui

School of Electrical Engineering and Automation

Harbin Institute of Technology
Tritium Pty Ltd

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Discrete silicon carbide (SiC) MOSFETs are often connected in parallel to reach high current capabilities. However, the unequal switching losses and transient current overshoots can limit the maximum switching frequency and current capability of the paralleled unit. In this paper, a paralleled half-bridge unit with the distributed arrangement of dc capacitors and the auxiliary gate-source connections is presented. The layout mismatches are analyzed and optimized by the AnsysEM simulation techniques. Compared to the traditional paralleled unit, the differences in the transient current overshoots for the low-side paralleled SiC MOSFETs are decreased significantly from 14.37 % to 2.78 %.

Original language	English
Title of host publication	Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	657-662
Number of pages	6
ISBN (Electronic)	9781728151694
DOIs	https://doi.org/10.1109/ICIEA48937.2020.9248117
State	Published - 9 Nov 2020
Event	15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020 - Virtual, Kristiansand, Norway Duration: 9 Nov 2020 → 13 Nov 2020

Publication series

Name	Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020

Conference

Conference	15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020
Country/Territory	Norway
City	Virtual, Kristiansand
Period	9/11/20 → 13/11/20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

parallel connection
silicon carbide (SiC)

Access to Document

10.1109/ICIEA48937.2020.9248117

Cite this

Qu, J., Yu, Y., Zhang, Q., & Cui, S. (2020). A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors. In Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020 (pp. 657-662). Article 9248117 (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIEA48937.2020.9248117

Qu, Jianzhen ; Yu, Yifan ; Zhang, Qianfan et al. / A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors. Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 657-662 (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020).

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title = "A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors",

abstract = "Discrete silicon carbide (SiC) MOSFETs are often connected in parallel to reach high current capabilities. However, the unequal switching losses and transient current overshoots can limit the maximum switching frequency and current capability of the paralleled unit. In this paper, a paralleled half-bridge unit with the distributed arrangement of dc capacitors and the auxiliary gate-source connections is presented. The layout mismatches are analyzed and optimized by the AnsysEM simulation techniques. Compared to the traditional paralleled unit, the differences in the transient current overshoots for the low-side paralleled SiC MOSFETs are decreased significantly from 14.37 \% to 2.78 \%.",

keywords = "parallel connection, silicon carbide (SiC)",

author = "Jianzhen Qu and Yifan Yu and Qianfan Zhang and Shumei Cui",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020 ; Conference date: 09-11-2020 Through 13-11-2020",

year = "2020",

month = nov,

day = "9",

doi = "10.1109/ICIEA48937.2020.9248117",

language = "英语",

series = "Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "657--662",

booktitle = "Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020",

address = "美国",

}

Qu, J, Yu, Y, Zhang, Q & Cui, S 2020, A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors. in Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020., 9248117, Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020, Institute of Electrical and Electronics Engineers Inc., pp. 657-662, 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020, Virtual, Kristiansand, Norway, 9/11/20. https://doi.org/10.1109/ICIEA48937.2020.9248117

A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors. / Qu, Jianzhen; Yu, Yifan; Zhang, Qianfan et al.
Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 657-662 9248117 (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Yu, Yifan

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AU - Cui, Shumei

PY - 2020/11/9

Y1 - 2020/11/9

N2 - Discrete silicon carbide (SiC) MOSFETs are often connected in parallel to reach high current capabilities. However, the unequal switching losses and transient current overshoots can limit the maximum switching frequency and current capability of the paralleled unit. In this paper, a paralleled half-bridge unit with the distributed arrangement of dc capacitors and the auxiliary gate-source connections is presented. The layout mismatches are analyzed and optimized by the AnsysEM simulation techniques. Compared to the traditional paralleled unit, the differences in the transient current overshoots for the low-side paralleled SiC MOSFETs are decreased significantly from 14.37 % to 2.78 %.

AB - Discrete silicon carbide (SiC) MOSFETs are often connected in parallel to reach high current capabilities. However, the unequal switching losses and transient current overshoots can limit the maximum switching frequency and current capability of the paralleled unit. In this paper, a paralleled half-bridge unit with the distributed arrangement of dc capacitors and the auxiliary gate-source connections is presented. The layout mismatches are analyzed and optimized by the AnsysEM simulation techniques. Compared to the traditional paralleled unit, the differences in the transient current overshoots for the low-side paralleled SiC MOSFETs are decreased significantly from 14.37 % to 2.78 %.

KW - parallel connection

KW - silicon carbide (SiC)

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PB - Institute of Electrical and Electronics Engineers Inc.

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Qu J, Yu Y, Zhang Q , Cui S. A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors. In Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 657-662. 9248117. (Proceedings of the 15th IEEE Conference on Industrial Electronics and Applications, ICIEA 2020). doi: 10.1109/ICIEA48937.2020.9248117

A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors

Abstract

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UN SDGs

Keywords

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