A novel Z-axis capacitive accelerometer using SOG structure

Chen Weiping; Huo Mingxue; Lin Yumin; Liu Xiaowei; Zhang Ruichao

doi:10.1109/ICEPT.2005.1564703

A novel Z-axis capacitive accelerometer using SOG structure

Chen Weiping^*
, Huo Mingxue
, Lin Yumin
, Liu Xiaowei
, Zhang Ruichao

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A differential capacitive silicon z-axis micro-accelerometer using SOG (silicon on glass) structure, based on bulk micromachining technology is proposed and a novel structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated, by only one set of masks. The simulation of the static and modal performance of the accelerometer structure is completed with the FEM (finite element method) and the optimized design of the accelerometer is accomplished. The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure was used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation (IntelliSuite). The mechanical sensitivity of the accelerometer varies from 2.37×10^-7m/g_n to 1.74×10^-8m/g_n as the thickness of the beam from 50μm to 20μm.

Original language	English
Title of host publication	2005 6th International Conference on Electronics Packaging Technology
Publisher	IEEE Computer Society
Pages	105-107
Number of pages	3
ISBN (Print)	0780394496, 9780780394490
DOIs	https://doi.org/10.1109/ICEPT.2005.1564703
State	Published - 2005
Event	2005 6th International Conference on Electronics Packaging Technology - Dameisha, Shenzhen, China Duration: 30 Aug 2005 → 2 Sep 2005

Publication series

Name	2005 6th International Conference on Electronics Packaging Technology
Volume	2005

Conference

Conference	2005 6th International Conference on Electronics Packaging Technology
Country/Territory	China
City	Dameisha, Shenzhen
Period	30/08/05 → 2/09/05

Keywords

Accelerometer
FEM
Simulation

Access to Document

10.1109/ICEPT.2005.1564703

Cite this

Weiping, C., Mingxue, H., Yumin, L., Xiaowei, L., & Ruichao, Z. (2005). A novel Z-axis capacitive accelerometer using SOG structure. In 2005 6th International Conference on Electronics Packaging Technology (pp. 105-107). Article 1564703 (2005 6th International Conference on Electronics Packaging Technology; Vol. 2005). IEEE Computer Society. https://doi.org/10.1109/ICEPT.2005.1564703

@inproceedings{6ebcd6e4713e4159b349156fdd514598,

title = "A novel Z-axis capacitive accelerometer using SOG structure",

abstract = "A differential capacitive silicon z-axis micro-accelerometer using SOG (silicon on glass) structure, based on bulk micromachining technology is proposed and a novel structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated, by only one set of masks. The simulation of the static and modal performance of the accelerometer structure is completed with the FEM (finite element method) and the optimized design of the accelerometer is accomplished. The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure was used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation (IntelliSuite). The mechanical sensitivity of the accelerometer varies from 2.37{\texttimes}10-7m/gn to 1.74{\texttimes}10-8m/gn as the thickness of the beam from 50μm to 20μm.",

keywords = "Accelerometer, FEM, Simulation",

author = "Chen Weiping and Huo Mingxue and Lin Yumin and Liu Xiaowei and Zhang Ruichao",

year = "2005",

doi = "10.1109/ICEPT.2005.1564703",

language = "英语",

isbn = "0780394496",

series = "2005 6th International Conference on Electronics Packaging Technology",

publisher = "IEEE Computer Society",

pages = "105--107",

booktitle = "2005 6th International Conference on Electronics Packaging Technology",

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note = "2005 6th International Conference on Electronics Packaging Technology ; Conference date: 30-08-2005 Through 02-09-2005",

}

Weiping, C, Mingxue, H, Yumin, L, Xiaowei, L & Ruichao, Z 2005, A novel Z-axis capacitive accelerometer using SOG structure. in 2005 6th International Conference on Electronics Packaging Technology., 1564703, 2005 6th International Conference on Electronics Packaging Technology, vol. 2005, IEEE Computer Society, pp. 105-107, 2005 6th International Conference on Electronics Packaging Technology, Dameisha, Shenzhen, China, 30/08/05. https://doi.org/10.1109/ICEPT.2005.1564703

A novel Z-axis capacitive accelerometer using SOG structure. / Weiping, Chen; Mingxue, Huo; Yumin, Lin et al.
2005 6th International Conference on Electronics Packaging Technology. IEEE Computer Society, 2005. p. 105-107 1564703 (2005 6th International Conference on Electronics Packaging Technology; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A novel Z-axis capacitive accelerometer using SOG structure

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AU - Mingxue, Huo

AU - Yumin, Lin

AU - Xiaowei, Liu

AU - Ruichao, Zhang

PY - 2005

Y1 - 2005

N2 - A differential capacitive silicon z-axis micro-accelerometer using SOG (silicon on glass) structure, based on bulk micromachining technology is proposed and a novel structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated, by only one set of masks. The simulation of the static and modal performance of the accelerometer structure is completed with the FEM (finite element method) and the optimized design of the accelerometer is accomplished. The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure was used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation (IntelliSuite). The mechanical sensitivity of the accelerometer varies from 2.37×10-7m/gn to 1.74×10-8m/gn as the thickness of the beam from 50μm to 20μm.

AB - A differential capacitive silicon z-axis micro-accelerometer using SOG (silicon on glass) structure, based on bulk micromachining technology is proposed and a novel structure is designed. The device with a three-layer structure can provide a variable sensitivity as changing the thickness of the beam fabricated, by only one set of masks. The simulation of the static and modal performance of the accelerometer structure is completed with the FEM (finite element method) and the optimized design of the accelerometer is accomplished. The key techniques in the fabrication are investigated and the process flow is designed, furthermore, corner compensation structure was used in the masks to avoid convex corner undercutting, which is simulated and optimized by process simulation (IntelliSuite). The mechanical sensitivity of the accelerometer varies from 2.37×10-7m/gn to 1.74×10-8m/gn as the thickness of the beam from 50μm to 20μm.

KW - Accelerometer

KW - FEM

KW - Simulation

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M3 - 会议稿件

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SN - 9780780394490

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ER -

A novel Z-axis capacitive accelerometer using SOG structure

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