TY - GEN
T1 - A novel three stage drive circuit for IGBT
AU - Yaxiu, Sun
AU - Li, Sun
AU - Esmaeli, Abdolreza
AU - Ke, Zhao
PY - 2006
Y1 - 2006
N2 - IGBT is widely applied in converter circuit because of its highly switching speed and easy driving, which brings severity electromagnetic interference (EMI). High and low of the gate drive circuit performance affects the level of EMI. This paper proposed a novel three stage gate control technology for IGBT. It is based on an optimal combination of several requirements necessary for good switching performance under snubberless operation conditions. The control scheme specifically combines together the slow drive requirements for low electromagnetic interference and switching stress and the fast drive requirements for high-speed switching and low switching losses. The gate drive can also effectively dampen current and voltage oscillations generated during turn-on and turn-off respectively. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates using experimental results that the proposed three-stage gate drive scheme obtains an optimal between switching speed, power dissipation and electromagnetic interference.
AB - IGBT is widely applied in converter circuit because of its highly switching speed and easy driving, which brings severity electromagnetic interference (EMI). High and low of the gate drive circuit performance affects the level of EMI. This paper proposed a novel three stage gate control technology for IGBT. It is based on an optimal combination of several requirements necessary for good switching performance under snubberless operation conditions. The control scheme specifically combines together the slow drive requirements for low electromagnetic interference and switching stress and the fast drive requirements for high-speed switching and low switching losses. The gate drive can also effectively dampen current and voltage oscillations generated during turn-on and turn-off respectively. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates using experimental results that the proposed three-stage gate drive scheme obtains an optimal between switching speed, power dissipation and electromagnetic interference.
UR - https://www.scopus.com/pages/publications/42749102439
U2 - 10.1109/ICIEA.2006.257365
DO - 10.1109/ICIEA.2006.257365
M3 - 会议稿件
AN - SCOPUS:42749102439
SN - 078039514X
SN - 9780780395145
T3 - 2006 1st IEEE Conference on Industrial Electronics and Applications
BT - 2006 1st IEEE Conference on Industrial Electronics and Applications
T2 - 2006 1st IEEE Conference on Industrial Electronics and Applications, ICIEA 2006
Y2 - 24 May 2006 through 26 May 2006
ER -