TY - GEN
T1 - A novel moiré fringe assisted method for nanoprecision alignment in wafer bonding
AU - Wang, Chenxi
AU - Suga, Tadatomo
PY - 2009
Y1 - 2009
N2 - High precision alignment is essential to 3D integrated circuit and other multilayer structure fabrication. A novel centrosymmetric square moiré grating is developed for aligning between the top and bottom wafers. The mismatched moiré fringes produced by the two superimposed centrosymmetric square gratings are highly sensitive with the misalignments and misaligned directions without requiring any external reference. Using two pairs of these square moiré gratings, misalignments of the bonded wafers are determined in X-Y-θ direction simultaneously on wafer scale. In our experiment, the misalignments in the order of ± 0.5 μm in X-Y direction can be easily identified using a simple infrared (IR) microscope. Moreover, the measurement of misalignments using the moiré fringe distances does not depend on the gap between the two wafers changing from tens of micrometers to zero during alignment process. Therefore, these moiré gratings are suitable for being secondary alignment mark to achieve high-precision alignment as well. A moiré fringe assisted alignment method is proposed for realization of alignment accuracy in nanometer-scale.
AB - High precision alignment is essential to 3D integrated circuit and other multilayer structure fabrication. A novel centrosymmetric square moiré grating is developed for aligning between the top and bottom wafers. The mismatched moiré fringes produced by the two superimposed centrosymmetric square gratings are highly sensitive with the misalignments and misaligned directions without requiring any external reference. Using two pairs of these square moiré gratings, misalignments of the bonded wafers are determined in X-Y-θ direction simultaneously on wafer scale. In our experiment, the misalignments in the order of ± 0.5 μm in X-Y direction can be easily identified using a simple infrared (IR) microscope. Moreover, the measurement of misalignments using the moiré fringe distances does not depend on the gap between the two wafers changing from tens of micrometers to zero during alignment process. Therefore, these moiré gratings are suitable for being secondary alignment mark to achieve high-precision alignment as well. A moiré fringe assisted alignment method is proposed for realization of alignment accuracy in nanometer-scale.
UR - https://www.scopus.com/pages/publications/70349695860
U2 - 10.1109/ECTC.2009.5074115
DO - 10.1109/ECTC.2009.5074115
M3 - 会议稿件
AN - SCOPUS:70349695860
SN - 9781424444762
T3 - Proceedings - Electronic Components and Technology Conference
SP - 872
EP - 878
BT - 2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009
T2 - 2009 59th Electronic Components and Technology Conference, ECTC 2009
Y2 - 26 May 2009 through 29 May 2009
ER -