A novel method for fabricating dual-continuous pore-ligament porous copper and application in power device packaging

Jiahao Liu; Lijin Qiu; Jixi Huang; Dongyang Tian; Hongtao Chen; Hao Zhao

doi:10.1016/j.matlet.2025.140005

A novel method for fabricating dual-continuous pore-ligament porous copper and application in power device packaging

Jiahao Liu
, Lijin Qiu
, Jixi Huang
, Dongyang Tian
, Hongtao Chen^*
, Hao Zhao

^*Corresponding author for this work

Harbin Institute of Technology Shenzhen
China Electronic Product Reliability and Environmental Testing Research Institute
Xiamen University of Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Owing to the excellent mechanical, thermal, electrical properties and high specific surface area, porous copper (P-Cu)-based composite solder have attracted growing interest in third-generation semiconductor packaging. This paper proposed a method for preparing P-Cu based on high-temperature reduction and powder sintering. The prepared P-Cu featured a unique dual-continuous pore-ligament structure and excellent wettability for Sn_96.5Ag_0.3Cu_0.5 (SAC305) solder to form P-Cu/SAC305 composite solder. After 30,000 power cycles at a constant junction temperature difference of 80 °C, the turn-on voltage of the SiC device packaged by P-Cu/SAC305 remained stable, and the thermal resistance of the device increased only from 2.40 K/W to 3.04 K/W.

Original language	English
Article number	140005
Journal	Materials Letters
Volume	407
DOIs	https://doi.org/10.1016/j.matlet.2025.140005
State	Published - 15 Mar 2026
Externally published	Yes

Keywords

Dual-continuous pore-ligament structure
Low temperature reflow-high temperature service
Porous copper
Power cycling
Thermal resistance

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10.1016/j.matlet.2025.140005

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@article{b0101819862943f9a6879c5811b8707d,

title = "A novel method for fabricating dual-continuous pore-ligament porous copper and application in power device packaging",

abstract = "Owing to the excellent mechanical, thermal, electrical properties and high specific surface area, porous copper (P-Cu)-based composite solder have attracted growing interest in third-generation semiconductor packaging. This paper proposed a method for preparing P-Cu based on high-temperature reduction and powder sintering. The prepared P-Cu featured a unique dual-continuous pore-ligament structure and excellent wettability for Sn96.5Ag0.3Cu0.5 (SAC305) solder to form P-Cu/SAC305 composite solder. After 30,000 power cycles at a constant junction temperature difference of 80 °C, the turn-on voltage of the SiC device packaged by P-Cu/SAC305 remained stable, and the thermal resistance of the device increased only from 2.40 K/W to 3.04 K/W.",

keywords = "Dual-continuous pore-ligament structure, Low temperature reflow-high temperature service, Porous copper, Power cycling, Thermal resistance",

author = "Jiahao Liu and Lijin Qiu and Jixi Huang and Dongyang Tian and Hongtao Chen and Hao Zhao",

note = "Publisher Copyright: {\textcopyright} 2024",

year = "2026",

month = mar,

day = "15",

doi = "10.1016/j.matlet.2025.140005",

language = "英语",

volume = "407",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - A novel method for fabricating dual-continuous pore-ligament porous copper and application in power device packaging

AU - Liu, Jiahao

AU - Qiu, Lijin

AU - Huang, Jixi

AU - Tian, Dongyang

AU - Chen, Hongtao

AU - Zhao, Hao

PY - 2026/3/15

Y1 - 2026/3/15

N2 - Owing to the excellent mechanical, thermal, electrical properties and high specific surface area, porous copper (P-Cu)-based composite solder have attracted growing interest in third-generation semiconductor packaging. This paper proposed a method for preparing P-Cu based on high-temperature reduction and powder sintering. The prepared P-Cu featured a unique dual-continuous pore-ligament structure and excellent wettability for Sn96.5Ag0.3Cu0.5 (SAC305) solder to form P-Cu/SAC305 composite solder. After 30,000 power cycles at a constant junction temperature difference of 80 °C, the turn-on voltage of the SiC device packaged by P-Cu/SAC305 remained stable, and the thermal resistance of the device increased only from 2.40 K/W to 3.04 K/W.

AB - Owing to the excellent mechanical, thermal, electrical properties and high specific surface area, porous copper (P-Cu)-based composite solder have attracted growing interest in third-generation semiconductor packaging. This paper proposed a method for preparing P-Cu based on high-temperature reduction and powder sintering. The prepared P-Cu featured a unique dual-continuous pore-ligament structure and excellent wettability for Sn96.5Ag0.3Cu0.5 (SAC305) solder to form P-Cu/SAC305 composite solder. After 30,000 power cycles at a constant junction temperature difference of 80 °C, the turn-on voltage of the SiC device packaged by P-Cu/SAC305 remained stable, and the thermal resistance of the device increased only from 2.40 K/W to 3.04 K/W.

KW - Dual-continuous pore-ligament structure

KW - Low temperature reflow-high temperature service

KW - Porous copper

KW - Power cycling

KW - Thermal resistance

UR - https://www.scopus.com/pages/publications/105026142584

U2 - 10.1016/j.matlet.2025.140005

DO - 10.1016/j.matlet.2025.140005

M3 - 文章

AN - SCOPUS:105026142584

SN - 0167-577X

VL - 407

JO - Materials Letters

JF - Materials Letters

M1 - 140005

ER -

A novel method for fabricating dual-continuous pore-ligament porous copper and application in power device packaging

Abstract

Keywords

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