Abstract
High-volume-fraction SiCP/Al composites show great promise for electronic packaging applications, but poor interfacial bonding and non-uniform microstructure limit their performance enhancement. This study fabricated a series of high-volume-fraction SiCP/Al composites containing 5–15 wt% Ag72Cu28 eutectic brazing filler via spark plasma sintering. It systematically analyzed the effects of Ag72Cu28 addition on the microstructure and properties of the composites. Microstructural analysis reveals a unique dual modification mechanism: Ag segregates to the SiC/Al interface, reducing the oxide layer thickness from 2 to 3 nm to 1–2 nm and significantly improving interfacial metallurgical bonding; meanwhile, phase separation of Ag-Cu in the matrix produces Ag-rich Al(Ag) solid solution and Cu-rich Al₂Cu precursors, forming a strengthening network. The chain-like network provides both a reinforcement framework and thermal-conduction pathways while avoiding excessive networking-induced defect accumulation. The composite achieved optimal properties at 10 wt% Ag-Cu: 99.1 % relative density, 298.5 HV Vickers hardness (50 % increase over baseline composite), 282.7 MPa flexural strength (87% increase), and 128.42 W/(m·K) thermal conductivity. This study provides a novel strategy for developing high-performance electronic packaging materials.
| Original language | English |
|---|---|
| Article number | 115761 |
| Journal | Materials Characterization |
| Volume | 230 |
| DOIs | |
| State | Published - Dec 2025 |
| Externally published | Yes |
Keywords
- Ag₇₂Cu₂₈ eutectic brazing filler
- In-situ network formation
- Phase separation
- SPS
- SiC/Al-matrix composites
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