TY - GEN
T1 - A novel active gate driver with auxiliary gate current control circuit for improving switching performance of high-power SiC MOSFET modules
AU - Geng, Chengfei
AU - Zhang, Donglai
AU - Wu, Xuanqin
AU - Shen, Wen
AU - Dong, Ruiyong
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/11/1
Y1 - 2020/11/1
N2 - Silicon carbide (SiC) MOSFETs are gaining increasing usage in industrial applications demanding for higher power density and lower power dissipation. Despite the high switching rate nature of this device, some problems, including intensified oscillations, overshoots, electromagnetic interference (EMI) and possible additional losses, do arise. In this paper, a new active gate driver (AGD) with Auxiliary Gate Current Control (AGCC) unit is proposed. To optimize the switching transients, the gate current is regulated throughout the whole switching process by adjustment of the AGCC reference voltage. Advantageously, this regulation is effective both for normal operation and short-circuit fault conditions. Extensive empirical results on a 1.2kV, 300A SiC MOSFET confirmed performance improvement achieved by the proposed AGD, especially on the suppression of induced overshoots and oscillations.
AB - Silicon carbide (SiC) MOSFETs are gaining increasing usage in industrial applications demanding for higher power density and lower power dissipation. Despite the high switching rate nature of this device, some problems, including intensified oscillations, overshoots, electromagnetic interference (EMI) and possible additional losses, do arise. In this paper, a new active gate driver (AGD) with Auxiliary Gate Current Control (AGCC) unit is proposed. To optimize the switching transients, the gate current is regulated throughout the whole switching process by adjustment of the AGCC reference voltage. Advantageously, this regulation is effective both for normal operation and short-circuit fault conditions. Extensive empirical results on a 1.2kV, 300A SiC MOSFET confirmed performance improvement achieved by the proposed AGD, especially on the suppression of induced overshoots and oscillations.
KW - Active Gate Driver
KW - CPLD
KW - Oscillations
KW - Overshoots
KW - SiC-MOSFET
UR - https://www.scopus.com/pages/publications/85100757441
U2 - 10.1109/CIYCEE49808.2020.9332773
DO - 10.1109/CIYCEE49808.2020.9332773
M3 - 会议稿件
AN - SCOPUS:85100757441
T3 - 2020 IEEE 1st China International Youth Conference on Electrical Engineering, CIYCEE 2020
BT - 2020 IEEE 1st China International Youth Conference on Electrical Engineering, CIYCEE 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1st IEEE China International Youth Conference on Electrical Engineering, CIYCEE 2020
Y2 - 1 November 2020 through 4 November 2020
ER -