A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress

Z. C. Wang; C. Chen; H. D. Wang; C. Y. Wang; Z. F. Wang; X. R. Ye

doi:10.1016/j.microrel.2023.115157

A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress

Z. C. Wang
, C. Chen^*
, H. D. Wang
, C. Y. Wang
, Z. F. Wang
, X. R. Ye

^*Corresponding author for this work

School of Electrical Engineering and Automation

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Negative Bias Temperature Instability (NBTI) of p-channel power MOSFETs is a primary concern in gate oxide degradation. Instead of a qualitative conclusion, predicting the degradation in the on-state resistance during long-term operation is significant. This paper evaluates the degradation of each component of the on-state resistance under NBTI stress. By dividing the on-state resistance into two parts based on whether it is affected by NBTI, we obtain a first-order linear model form to model the on-state resistance. This study can support the physical modelling and the remaining useful life prediction of the on-state resistance in long-term operation.

Original language	English
Article number	115157
Journal	Microelectronics Reliability
Volume	150
DOIs	https://doi.org/10.1016/j.microrel.2023.115157
State	Published - Nov 2023

Keywords

Accelerated degradation test
NBTI
On-state resistance
Physical modelling
Power MOSFET

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10.1016/j.microrel.2023.115157

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title = "A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress",

abstract = "Negative Bias Temperature Instability (NBTI) of p-channel power MOSFETs is a primary concern in gate oxide degradation. Instead of a qualitative conclusion, predicting the degradation in the on-state resistance during long-term operation is significant. This paper evaluates the degradation of each component of the on-state resistance under NBTI stress. By dividing the on-state resistance into two parts based on whether it is affected by NBTI, we obtain a first-order linear model form to model the on-state resistance. This study can support the physical modelling and the remaining useful life prediction of the on-state resistance in long-term operation.",

keywords = "Accelerated degradation test, NBTI, On-state resistance, Physical modelling, Power MOSFET",

author = "Wang, \{Z. C.\} and C. Chen and Wang, \{H. D.\} and Wang, \{C. Y.\} and Wang, \{Z. F.\} and Ye, \{X. R.\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = nov,

doi = "10.1016/j.microrel.2023.115157",

language = "英语",

volume = "150",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress

AU - Wang, Z. C.

AU - Chen, C.

AU - Wang, H. D.

AU - Wang, C. Y.

AU - Wang, Z. F.

AU - Ye, X. R.

PY - 2023/11

Y1 - 2023/11

N2 - Negative Bias Temperature Instability (NBTI) of p-channel power MOSFETs is a primary concern in gate oxide degradation. Instead of a qualitative conclusion, predicting the degradation in the on-state resistance during long-term operation is significant. This paper evaluates the degradation of each component of the on-state resistance under NBTI stress. By dividing the on-state resistance into two parts based on whether it is affected by NBTI, we obtain a first-order linear model form to model the on-state resistance. This study can support the physical modelling and the remaining useful life prediction of the on-state resistance in long-term operation.

AB - Negative Bias Temperature Instability (NBTI) of p-channel power MOSFETs is a primary concern in gate oxide degradation. Instead of a qualitative conclusion, predicting the degradation in the on-state resistance during long-term operation is significant. This paper evaluates the degradation of each component of the on-state resistance under NBTI stress. By dividing the on-state resistance into two parts based on whether it is affected by NBTI, we obtain a first-order linear model form to model the on-state resistance. This study can support the physical modelling and the remaining useful life prediction of the on-state resistance in long-term operation.

KW - Accelerated degradation test

KW - NBTI

KW - On-state resistance

KW - Physical modelling

KW - Power MOSFET

UR - https://www.scopus.com/pages/publications/85174578452

U2 - 10.1016/j.microrel.2023.115157

DO - 10.1016/j.microrel.2023.115157

M3 - 文章

AN - SCOPUS:85174578452

SN - 0026-2714

VL - 150

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 115157

ER -

A modelling method of the on-state resistance of p-channel power MOSFETs under NBTI stress

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Keywords

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