A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications

De Zhong Li; Cong Wang; Wen Cheng Huang; Ram Krishna Maharjan; Sung Jin Cho; Bhanu Shrestha; Gear Inpyo Kyung; Nam Young Kim

doi:10.1109/MAPE.2009.5355712

A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications

De Zhong Li^*
, Cong Wang
, Wen Cheng Huang
, Ram Krishna Maharjan
, Sung Jin Cho
, Bhanu Shrestha
, Gear Inpyo Kyung
, Nam Young Kim

^*Corresponding author for this work

Kwangwoon University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications is demonstrated. This three-stage power amplifier is designed to fully match the 50 Ω input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (P_ldB) of 29.5 dBm, a power added efficiency (PAE) of 31%, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 × 1.964 mm ² on GaAs substrate.

Original language	English
Title of host publication	Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009
Pages	20-23
Number of pages	4
DOIs	https://doi.org/10.1109/MAPE.2009.5355712
State	Published - 2009
Externally published	Yes
Event	2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009 - Beijing, China Duration: 27 Oct 2009 → 29 Oct 2009

Publication series

Name	Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

Conference

Conference	2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009
Country/Territory	China
City	Beijing
Period	27/10/09 → 29/10/09

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10.1109/MAPE.2009.5355712

Cite this

Li, D. Z., Wang, C., Huang, W. C., Maharjan, R. K., Cho, S. J., Shrestha, B., Kyung, G. I., & Kim, N. Y. (2009). A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications. In Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009 (pp. 20-23). Article 5355712 (Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009). https://doi.org/10.1109/MAPE.2009.5355712

Li, De Zhong ; Wang, Cong ; Huang, Wen Cheng et al. / A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications. Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009. 2009. pp. 20-23 (Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009).

@inproceedings{72a880bf5bd1407a92b8c6a46d337398,

title = "A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications",

abstract = "In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications is demonstrated. This three-stage power amplifier is designed to fully match the 50 Ω input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (PldB) of 29.5 dBm, a power added efficiency (PAE) of 31\%, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 × 1.964 mm 2 on GaAs substrate.",

author = "Li, \{De Zhong\} and Cong Wang and Huang, \{Wen Cheng\} and Maharjan, \{Ram Krishna\} and Cho, \{Sung Jin\} and Bhanu Shrestha and Kyung, \{Gear Inpyo\} and Kim, \{Nam Young\}",

year = "2009",

doi = "10.1109/MAPE.2009.5355712",

language = "英语",

isbn = "9781424440740",

series = "Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009",

pages = "20--23",

booktitle = "Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009",

note = "2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009 ; Conference date: 27-10-2009 Through 29-10-2009",

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Li, DZ, Wang, C, Huang, WC, Maharjan, RK, Cho, SJ, Shrestha, B, Kyung, GI & Kim, NY 2009, A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications. in Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009., 5355712, Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009, pp. 20-23, 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009, Beijing, China, 27/10/09. https://doi.org/10.1109/MAPE.2009.5355712

A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications. / Li, De Zhong; Wang, Cong; Huang, Wen Cheng et al.
Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009. 2009. p. 20-23 5355712 (Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications

AU - Li, De Zhong

AU - Wang, Cong

AU - Huang, Wen Cheng

AU - Maharjan, Ram Krishna

AU - Cho, Sung Jin

AU - Shrestha, Bhanu

AU - Kyung, Gear Inpyo

AU - Kim, Nam Young

PY - 2009

Y1 - 2009

N2 - In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications is demonstrated. This three-stage power amplifier is designed to fully match the 50 Ω input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (PldB) of 29.5 dBm, a power added efficiency (PAE) of 31%, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 × 1.964 mm 2 on GaAs substrate.

AB - In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications is demonstrated. This three-stage power amplifier is designed to fully match the 50 Ω input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (PldB) of 29.5 dBm, a power added efficiency (PAE) of 31%, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 × 1.964 mm 2 on GaAs substrate.

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U2 - 10.1109/MAPE.2009.5355712

DO - 10.1109/MAPE.2009.5355712

M3 - 会议稿件

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T3 - Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

SP - 20

EP - 23

BT - Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

T2 - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

Y2 - 27 October 2009 through 29 October 2009

ER -

Li DZ, Wang C, Huang WC, Maharjan RK, Cho SJ, Shrestha B et al. A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications. In Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009. 2009. p. 20-23. 5355712. (Proceedings - 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009). doi: 10.1109/MAPE.2009.5355712

A high-power Ka-band power amplifier design based on GaAs P-HEMT technology for VSAT ODU applications

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