A high-g overload protected accelerometer with a novel microstructure

Weiping Chen; Wei Wang; Lei Tian; Xiaowei Liu; Mingxue Huo; Ruichao Zhang; Deyin Zhang

doi:10.1117/12.581191

A high-g overload protected accelerometer with a novel microstructure

Weiping Chen^*
, Wei Wang
, Lei Tian
, Xiaowei Liu
, Mingxue Huo
, Ruichao Zhang
, Deyin Zhang

^*Corresponding author for this work

School of Astronautics

China Electronics Technology Group Corporation
Harbin Institute of Technology

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.

Original language	English
Article number	26
Pages (from-to)	82-86
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5641
DOIs	https://doi.org/10.1117/12.581191
State	Published - 2004
Event	MEMS/MOEMS Technologies and Applications II - Beijing, China Duration: 10 Nov 2004 → 12 Nov 2004

Keywords

Accelerometer
FEM
Overload
Piezoresistor

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10.1117/12.581191

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title = "A high-g overload protected accelerometer with a novel microstructure",

abstract = "A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5\% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.",

keywords = "Accelerometer, FEM, Overload, Piezoresistor",

author = "Weiping Chen and Wei Wang and Lei Tian and Xiaowei Liu and Mingxue Huo and Ruichao Zhang and Deyin Zhang",

year = "2004",

doi = "10.1117/12.581191",

language = "英语",

volume = "5641",

pages = "82--86",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "MEMS/MOEMS Technologies and Applications II ; Conference date: 10-11-2004 Through 12-11-2004",

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TY - JOUR

T1 - A high-g overload protected accelerometer with a novel microstructure

AU - Chen, Weiping

AU - Wang, Wei

AU - Tian, Lei

AU - Liu, Xiaowei

AU - Huo, Mingxue

AU - Zhang, Ruichao

AU - Zhang, Deyin

PY - 2004

Y1 - 2004

N2 - A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.

AB - A high-g overload protected piezoresistive accelerometer with the cave form section and two-end-fixed beams was introduced in this paper. Based on the finite element method (FEM) simulation, an optimal design of the microstructure was presented. The accelerometer was fabricated by standard IC process, ICP plasma etching and silicon anodic bonding technique. The testing results show that the accelerometer can bear 20,000g shock, the non-linearity reaches to 0.5% in the ±50g full scale, sensitivity reaches 0.8mV/g, and the operation frequency range is from DC to 2kHz.

KW - Accelerometer

KW - FEM

KW - Overload

KW - Piezoresistor

UR - https://www.scopus.com/pages/publications/20044386156

U2 - 10.1117/12.581191

DO - 10.1117/12.581191

M3 - 会议文章

AN - SCOPUS:20044386156

SN - 0277-786X

VL - 5641

SP - 82

EP - 86

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 26

T2 - MEMS/MOEMS Technologies and Applications II

Y2 - 10 November 2004 through 12 November 2004

ER -

A high-g overload protected accelerometer with a novel microstructure

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Keywords

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