A graphene-based passively Q-switched Ho:YAG laser

Bao Quan Yao; Zheng Cui; Xiao Ming Duan; Ying Jie Shen; Ji Wang; Yan Qiu Du

doi:10.1088/0256-307X/31/7/074204

A graphene-based passively Q-switched Ho:YAG laser

Bao Quan Yao
, Zheng Cui
, Xiao Ming Duan^*
, Ying Jie Shen
, Ji Wang
, Yan Qiu Du

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A 2.09-μm in-band pumped passively Q-switched Ho:YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11 μs is obtained at an average output power of 100 mW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M² of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho:YAG crystal is a potential gain medium in the 2 μm range for the graphene application.

Original language	English
Article number	074204
Journal	Chinese Physics Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1088/0256-307X/31/7/074204
State	Published - 1 Jul 2014

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title = "A graphene-based passively Q-switched Ho:YAG laser",

abstract = "A 2.09-μm in-band pumped passively Q-switched Ho:YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11 μs is obtained at an average output power of 100 mW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3\%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho:YAG crystal is a potential gain medium in the 2 μm range for the graphene application.",

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AU - Yao, Bao Quan

AU - Cui, Zheng

AU - Duan, Xiao Ming

AU - Shen, Ying Jie

AU - Wang, Ji

AU - Du, Yan Qiu

PY - 2014/7/1

Y1 - 2014/7/1

N2 - A 2.09-μm in-band pumped passively Q-switched Ho:YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11 μs is obtained at an average output power of 100 mW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho:YAG crystal is a potential gain medium in the 2 μm range for the graphene application.

AB - A 2.09-μm in-band pumped passively Q-switched Ho:YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11 μs is obtained at an average output power of 100 mW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho:YAG crystal is a potential gain medium in the 2 μm range for the graphene application.

UR - https://www.scopus.com/pages/publications/84904006694

U2 - 10.1088/0256-307X/31/7/074204

DO - 10.1088/0256-307X/31/7/074204

M3 - 文章

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SN - 0256-307X

VL - 31

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 7

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ER -

A graphene-based passively Q-switched Ho:YAG laser

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