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A comparative study on high temperature oxidation behavior of SiC, SiC-BN and SiBCN monoliths

  • Meng Zhang
  • , Qingqing Chen
  • , Yunpeng He
  • , Yuzhe Hong
  • , Daxin Li*
  • , Zhihua Yang
  • , Dechang Jia
  • , Delong Cai
  • , Zibo Niu
  • , Jingyi Guan
  • , Bingzhu Wang
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Ministry of Industry and Information Technology
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, the oxidation behavior and mechanism of SiBCN monoliths were compared with SiC and SiC-BN monoliths. At 1100–1300 °C, the oxide layers of SiC and SiBCN monoliths were relatively smooth and dense, while that of SiC-BN monoliths were destroyed by many bubbles. Further oxidized at 1500 °C, some cracks and bubbles appeared on the surfaces and interfaces of SiC-BN monoliths. The oxidation of SiC phases was thermodynamically unstable than that of C and BN, but the oxidation of BN and/or C occurred preferentially after considering the kinetic factors. BN(C) phase has a positive role on SiBCN oxidation resistance. Data availability: The raw/processed data required to reproduce these findings cannot be shared at this time due to legal or ethical reasons.

Original languageEnglish
Article number109855
JournalCorrosion Science
Volume192
DOIs
StatePublished - Nov 2021

Keywords

  • Oxidation behavior
  • Oxidation mechanism
  • SiBCN
  • SiC
  • SiC-BN

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