A comparative study on diode-pumped continuous wave Tm:Ho:YVO4 and Tm:Ho:GdVO4 lasers

B. Q. Yao; F. Chen; C. T. Wu; Q. Wang; G. Li; C. H. Zhang; Y. Z. Wang; Y. L. Ju

doi:10.1134/S1054660X11050306

A comparative study on diode-pumped continuous wave Tm:Ho:YVO₄ and Tm:Ho:GdVO₄ lasers

B. Q. Yao
, F. Chen
, C. T. Wu
, Q. Wang
, G. Li
, C. H. Zhang
, Y. Z. Wang
, Y. L. Ju

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.

Original language	English
Pages (from-to)	468-471
Number of pages	4
Journal	Laser Physics
Volume	21
Issue number	3
DOIs	https://doi.org/10.1134/S1054660X11050306
State	Published - Mar 2011

Access to Document

10.1134/S1054660X11050306

Cite this

@article{f43e8c2f29744e399c0a81101cc7f317,

title = "A comparative study on diode-pumped continuous wave Tm:Ho:YVO4 and Tm:Ho:GdVO4 lasers",

abstract = "In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO4 microchip laser and Tm:Ho:GdVO4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO4 laser and Tm:Ho:GdVO4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO4 laser, Tm:Ho:YVO4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO4 laser.",

author = "Yao, \{B. Q.\} and F. Chen and Wu, \{C. T.\} and Q. Wang and G. Li and Zhang, \{C. H.\} and Wang, \{Y. Z.\} and Ju, \{Y. L.\}",

year = "2011",

month = mar,

doi = "10.1134/S1054660X11050306",

language = "英语",

volume = "21",

pages = "468--471",

journal = "Laser Physics",

issn = "1054-660X",

publisher = "Institute of Physics Publishing",

number = "3",

}

TY - JOUR

T1 - A comparative study on diode-pumped continuous wave Tm:Ho:YVO4 and Tm:Ho:GdVO4 lasers

AU - Yao, B. Q.

AU - Chen, F.

AU - Wu, C. T.

AU - Wang, Q.

AU - Li, G.

AU - Zhang, C. H.

AU - Wang, Y. Z.

AU - Ju, Y. L.

PY - 2011/3

Y1 - 2011/3

N2 - In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO4 microchip laser and Tm:Ho:GdVO4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO4 laser and Tm:Ho:GdVO4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO4 laser, Tm:Ho:YVO4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO4 laser.

AB - In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO4 microchip laser and Tm:Ho:GdVO4 microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO4 laser and Tm:Ho:GdVO4 laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO4 laser, Tm:Ho:YVO4 laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO4 laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO4 laser.

UR - https://www.scopus.com/pages/publications/79955816787

U2 - 10.1134/S1054660X11050306

DO - 10.1134/S1054660X11050306

M3 - 文章

AN - SCOPUS:79955816787

SN - 1054-660X

VL - 21

SP - 468

EP - 471

JO - Laser Physics

JF - Laser Physics

IS - 3

ER -

A comparative study on diode-pumped continuous wave Tm:Ho:YVO₄ and Tm:Ho:GdVO₄ lasers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this