A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology

Cong Wang; Chuluunbaatar Zorigt; Sung Jin Cho; Nam Young Kim

doi:10.1063/1.3666674

A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology

Cong Wang^*
, Chuluunbaatar Zorigt
, Sung Jin Cho
, Nam Young Kim

^*Corresponding author for this work

Kwangwoon University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6×1.1mm ² in InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) technology. This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator (LO) quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator (VCO). This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	915-916
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666674
State	Published - 2011
Externally published	Yes
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/10 → 30/07/10

Keywords

Heterojunction bipolar transistor (HBT)
Image rejection down-converter
LO quadrature generator
Polyphase filter
Single-balanced mixer
Voltage-controlled oscillator (VCO)

Access to Document

10.1063/1.3666674

Cite this

@inproceedings{20b892f33d7f492e9fdc2e538006706b,

title = "A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology",

abstract = "A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6×1.1mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) technology. This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator (LO) quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator (VCO). This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.",

keywords = "Heterojunction bipolar transistor (HBT), Image rejection down-converter, LO quadrature generator, Polyphase filter, Single-balanced mixer, Voltage-controlled oscillator (VCO)",

author = "Cong Wang and Chuluunbaatar Zorigt and Cho, \{Sung Jin\} and Kim, \{Nam Young\}",

year = "2011",

doi = "10.1063/1.3666674",

language = "英语",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "915--916",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Wang, C, Zorigt, C, Cho, SJ & Kim, NY 2011, A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 915-916, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25/07/10. https://doi.org/10.1063/1.3666674

A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology. / Wang, Cong; Zorigt, Chuluunbaatar; Cho, Sung Jin et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 915-916 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology

AU - Wang, Cong

AU - Zorigt, Chuluunbaatar

AU - Cho, Sung Jin

AU - Kim, Nam Young

PY - 2011

Y1 - 2011

N2 - A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6×1.1mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) technology. This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator (LO) quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator (VCO). This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.

AB - A fully differential X-band image rejection down-converter is fabricated using Hartley architecture with a total chip area of 2.6×1.1mm 2 in InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) technology. This down-converter consists of two single-balanced mixers, a differential intermediate frequency (IF) amplifier, a local oscillator (LO) quadrature generator, a three-stage polyphase filter, and a differential voltage-controlled oscillator (VCO). This down-converter yields an image rejection ratio of over 30 dB, a conversion gain of over 30 dB, a noise figure of less than 3.5 dB. The broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 35 mA are achieved.

KW - Heterojunction bipolar transistor (HBT)

KW - Image rejection down-converter

KW - LO quadrature generator

KW - Polyphase filter

KW - Single-balanced mixer

KW - Voltage-controlled oscillator (VCO)

UR - https://www.scopus.com/pages/publications/84862795386

U2 - 10.1063/1.3666674

DO - 10.1063/1.3666674

M3 - 会议稿件

AN - SCOPUS:84862795386

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 915

EP - 916

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

A broadband and miniaturized X-band MMIC image rejection down-converter in InGaP/GaAs HBT technology

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this