@inproceedings{a6ffeb11028f4df8abe42a16ac0cd0d7,
title = "A brief study on silicon crystal materials as a Mid-IR Raman amplifier",
abstract = "We consider a bulk silicon crystal material as a Mid-IR Raman amplifier and study its Raman amplification. A Raman amplifier is established when an intense pump laser pulse and a Raman laser pulse pass through one silicon simultaneously, with good spatial and temporal overlap. Considering the situation of pumping wavelength at 2.94 μm achievable by using an Er:YAG laser and Raman laser wavelength at 3.47 μm with the 521 cm -1 Raman shift, the properties of the output amplified Raman laser are investigated by numerically solving the coupled transfer equations.",
keywords = "Mid-IR, Radiation transfer equations, Raman amplifier, Silicon crystal",
author = "Cong Wang and Xingyu Zhang and Qingpu Wang and Xiaohan Chen and Zhenhua Cong and Zhaojun Liu and Huihua Xu and Jianli He",
year = "2012",
doi = "10.4028/www.scientific.net/AMR.531.185",
language = "英语",
isbn = "9783037854341",
series = "Advanced Materials Research",
pages = "185--188",
booktitle = "Advanced Research on Material Engineering, Chemistry, Bioinformatics II",
note = "2nd International Conference on Material Engineering, Chemistry, Bioinformatics, MECB 2012 ; Conference date: 14-07-2012 Through 15-07-2012",
}