A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

Yuxin Zhang; Jinghu Li; Xinsheng Wang; Zhicong Luo; Yanfei Zhou

doi:10.1587/ELEX.18.20210162

A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

Yuxin Zhang
, Jinghu Li^*
, Xinsheng Wang
, Zhicong Luo
, Yanfei Zhou

^*Corresponding author for this work

School of Information Science and Engineering, Harbin Institute of Technology Weihai
Fujian Agriculture and Forestry University
Xiamen Eochip Seiconductor Co. Ltd.

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Ahigh-precision and low-temperature-coefficient bandgap volt- age reference is proposed in 0.11 μm CMOS process. A temperature piece- wise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.

Original language	English
Journal	IEICE Electronics Express
Volume	18
Issue number	11
DOIs	https://doi.org/10.1587/ELEX.18.20210162
State	Published - 2021
Externally published	Yes

Keywords

And temperature coefficient
Bandgap voltage reference
Digital trimming
Temperature piecewise compensa- tion

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10.1587/ELEX.18.20210162

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title = "A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference",

abstract = "Ahigh-precision and low-temperature-coefficient bandgap volt- age reference is proposed in 0.11 μm CMOS process. A temperature piece- wise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.",

keywords = "And temperature coefficient, Bandgap voltage reference, Digital trimming, Temperature piecewise compensa- tion",

author = "Yuxin Zhang and Jinghu Li and Xinsheng Wang and Zhicong Luo and Yanfei Zhou",

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T1 - A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

AU - Zhang, Yuxin

AU - Li, Jinghu

AU - Wang, Xinsheng

AU - Luo, Zhicong

AU - Zhou, Yanfei

PY - 2021

Y1 - 2021

N2 - Ahigh-precision and low-temperature-coefficient bandgap volt- age reference is proposed in 0.11 μm CMOS process. A temperature piece- wise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.

AB - Ahigh-precision and low-temperature-coefficient bandgap volt- age reference is proposed in 0.11 μm CMOS process. A temperature piece- wise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from -40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.

KW - And temperature coefficient

KW - Bandgap voltage reference

KW - Digital trimming

KW - Temperature piecewise compensa- tion

UR - https://www.scopus.com/pages/publications/85108589732

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DO - 10.1587/ELEX.18.20210162

M3 - 文章

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SN - 1349-2543

VL - 18

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 11

ER -

A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

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Keywords

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