Abstract
This paper proposes an automated power amplifier (PA) design method based on deep learning (DL). The Sparameters of microstrip lines (MLs) are predicted using DL. Subsequently, the S-parameters of the matching network (MN) are calculated by cascading microwave networks. The automated synthesis of the output matching network (OMN) is achieved using the simulated annealing (SA) algorithm. Utilizing the proposed method, a 0.5-3 GHz PA is implemented with a 10 W GaN transistor. Within the operating frequency band, the output power ranges from 41.2 to 42.8 dBm, with a power gain exceeding 11 dB. The drain efficiency (DE) ranges from 58% to 73%, with an average value of 65.4%.
| Original language | English |
|---|---|
| Title of host publication | 2025 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2025 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Edition | 2025 |
| ISBN (Electronic) | 9798331525736 |
| DOIs | |
| State | Published - 2025 |
| Externally published | Yes |
| Event | 16th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2025 - Xi�an, China Duration: 19 May 2025 → 22 May 2025 |
Conference
| Conference | 16th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2025 |
|---|---|
| Country/Territory | China |
| City | Xi�an |
| Period | 19/05/25 → 22/05/25 |
Keywords
- GaN
- automated design
- broadband power amplifier (BPA)
- deep learning (DL)
- multi-octave
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