1.4-kV Irradiation-Hardened -Ga₂O₃ Heterojunction Barrier Schottky Diode Under 10⁷ ions/cm² Fluence and 82.1 MeV cm²/mg LET Environments

Single event burnout (SEB) caused by heavy ion irradiation in space environments poses a significant threat to aerospace power electronic devices. This work demonstrates irradiation-hardened -Ga₂O₃ heterojunction barrier Schottky (HJBS) diodes with exceptional SEB capability. The device design incorporates micron-scale deep trenches filled by p-type nickel oxide (NiO) and high-k BaTiO3 field-plate (FP) edge termination. This architecture efficiently extracts radiation-induced positive charges (holes) during single-event irradiation through the trenched-embedded Ni/p-NiO with low Ohmic contact resistance, significantly alleviating charge aggregation while minimizing non-uniform field distributions through strategically engineered charge drainage pathways. As a result, the HJBS device achieves a SEB voltage exceeding 1.4 kV and a SEB degradation rate of only 9.6%. This is the first demonstration of kilovolt-class radiation-hardened diodes, and its performance metrics are the best reported among SiC, GaN, Ga₂O₃ and Si power diodes to date. This work underscores the great potential of Ga₂O₃ power diodes for irradiation power applications.