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高质量CdSe单晶生长及其OPO性能研究

Translated title of the contribution: Growth and Optical Parametric Oscillator Properties of High Quality CdSe Single Crystal
  • Baozhu Li
  • , Yanzhao Gao
  • , Jian Wang*
  • , Hongjuan Cheng
  • , Yi Chen
  • , Baoquan Yao
  • *Corresponding author for this work
  • CETC
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

High quality CdSe single crystal, with the sizes of 54 mm in diameter and 25 mm in length, was successfully grown by a high pressure vertical gradient freeze (HPVGF) technique using seed. The full width at half maximum (FWHM) of (002) and (110) X-ray rocking curves of the CdSe crystal with wurtzite structure are 54.4 arcsec and 45.6 arcsec respectively. The results show that there are some small-size Se inclusions in CdSe crystal by the test of infrared microscope and SEM-EDS. The transmission spectra show that the infrared transmission is above 68% and the mean absorption coefficient is 0.037 cm-1 in the range of 2.5-20 μm. Using fabricated type II CdSe crystal with the dimensions of 10 mm×12 mm×50 mm, we demonstrated an optical parametric oscillator (OPO) pumped by a 2.09 μm acoustooptic Q-switched Ho: YAG laser at a pulse repetition frequency of 1 kHz. Up to 389 mW output is obtained at the idler wavelength of 11.47 μm with a linewidth of 33.2 nm.

Translated title of the contributionGrowth and Optical Parametric Oscillator Properties of High Quality CdSe Single Crystal
Original languageChinese (Traditional)
Pages (from-to)1517-1522
Number of pages6
JournalRengong Jingti Xuebao/Journal of Synthetic Crystals
Volume49
Issue number8
StatePublished - 1 Aug 2020

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