Abstract
(HiPIMS) can deposit high-quality thin films under high peak power due to its low duty cycle, low-frequency operation, high peak-power density, and high plasma density. HiPIMS can be used to deposit VO2 thin films by decreasing the preparation temperature while increasing the density of the thin film. In this paper, the main characteristics of HiPIMS are reviewed. At last, the advantages and problems in preparing VO2 thin films by HiPIMS were summarized and the application trends were prospected.
| Translated title of the contribution | Recent progress on the preparation of VO2 thin films by high-power impulse magnetron sputtering technology |
|---|---|
| Original language | Chinese (Traditional) |
| Pages (from-to) | 219-226 |
| Number of pages | 8 |
| Journal | Harbin Gongcheng Daxue Xuebao/Journal of Harbin Engineering University |
| Volume | 41 |
| Issue number | 2 |
| DOIs | |
| State | Published - 5 Feb 2020 |
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