金刚石表面生长石墨烯的纳观尺度机理研究进展

In recent decades, the graphene / diamond heterostructure formed by transferring graphene to the diamond surface has shown significant superiorities in the fields of ultra⁃precision manufacturing and microelectronics, whereas the intrinsic properties of graphene can be weakened significantly owing to the phonon scattering at the interface and the generation of defects after transferring graphene to the dielectric substrate. As a result, the direct growth of graphene on diamond has become a creative attempt to obtain a high⁃quality graphene / diamond heterostructure. Although the use of diamond as the substrate has a number of advantages in theory over other dielectric materials, the graphene grown on the diamond still has the drawbacks of many lattice defects and the small size of domain. Up to date, there is a shortage of mechanism analysis and theoretical guidance at nanoscale for graphene growth on diamond. This article summarizes the research progress on the nanoscale mechanism of graphene growth on diamond mediated by metal catalysis, nonmetallic atoms doping, and pyrolysis catalysis respectively. Concurrently, the typical results of graphene obtained under different process conditions are compared. Lastly, the challenges faced by the graphene growth on diamond are summarized, and the development direction of study on the nanoscale mechanism of graphene growth on diamond surface is prospected. In brief, the thesis lays a theoretical basis for the research and application of high⁃quality graphene / diamond heterostructures.