考虑器件工作温度影响的SiC功率MOSFET建模

A modeling method for the variable temperature in the whole working region based on MATLAB/Simulink was proposed. Based on the Si lateral double-diffused MOSFET model, the operating characteristic curves of SiC power MOSFET in the saturation zone was expanded by supplementary experiments. The model parameters were extracted by mathematical fitting according to the working characteristics of SiC power MOSFET. The modeling process was free from the dependence on physical parameters, while retaining the physical meaning of each parameter. Output characteristic, transfer characteristic, threshold voltage, on-resistance and switching loss of the device were verified by the experimental test at different voltages, currents and temperatures (from 25℃ to 125℃). The simulation results based on the MATLAB/Simulink model are consistent with the experimental test results, and the switching loss error was within 7%, which verified the accuracy and effectiveness of the proposed model. The system performance analysis and loss analysis in practical application of SiC power MOSFET could be estimated according to the proposed model.