导热金刚石同大尺寸芯片的低温烧结银连接工艺

Kechen Zhao; Jiwen Zhao; Bing Dai; Xu Zhang; Huaixin Guo; Huarui Sun; Jiaqi Zhu

导热金刚石同大尺寸芯片的低温烧结银连接工艺

Translated title of the contribution: Low-temperature Sintering Silver Joining Process of Thermal Conductive Diamond and Large-size Chip

Kechen Zhao
, Jiwen Zhao
, Bing Dai^*
, Xu Zhang
, Huaixin Guo
, Huarui Sun
, Jiaqi Zhu

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
Harbin Institute of Technology Shenzhen
Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The low-temperature and low-pressure sintering technology for connecting large-area (> 100 mm²) semiconductor silicon wafers and diamond through high thermal conductivity silver paste was realized in this paper. The surface was coated with a metal film to enhance the diffusion of solid atoms at the interface. The commercial silver paste was sintered at a low temperature of about 200℃ to obtain an uniform connection interface of diamond-silicon bonding. The calculated porosity is about 9.6%, and the equivalent thermal resistance of the middle-sintered silver layer is about 1.38×10^-5 m²•K/W.

Translated title of the contribution	Low-temperature Sintering Silver Joining Process of Thermal Conductive Diamond and Large-size Chip
Original language	Chinese (Traditional)
Pages (from-to)	65-68
Number of pages	4
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	41
Issue number	1
State	Published - 25 Feb 2021

Cite this

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title = "导热金刚石同大尺寸芯片的低温烧结银连接工艺",

abstract = "The low-temperature and low-pressure sintering technology for connecting large-area (> 100 mm2) semiconductor silicon wafers and diamond through high thermal conductivity silver paste was realized in this paper. The surface was coated with a metal film to enhance the diffusion of solid atoms at the interface. The commercial silver paste was sintered at a low temperature of about 200℃ to obtain an uniform connection interface of diamond-silicon bonding. The calculated porosity is about 9.6\%, and the equivalent thermal resistance of the middle-sintered silver layer is about 1.38×10-5 m2•K/W.",

keywords = "Chip heat dissipation, Diamond, Large-size connection, Low-temperature sintered silver",

author = "Kechen Zhao and Jiwen Zhao and Bing Dai and Xu Zhang and Huaixin Guo and Huarui Sun and Jiaqi Zhu",

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T1 - 导热金刚石同大尺寸芯片的低温烧结银连接工艺

AU - Zhao, Kechen

AU - Zhao, Jiwen

AU - Dai, Bing

AU - Zhang, Xu

AU - Guo, Huaixin

AU - Sun, Huarui

AU - Zhu, Jiaqi

PY - 2021/2/25

Y1 - 2021/2/25

N2 - The low-temperature and low-pressure sintering technology for connecting large-area (> 100 mm2) semiconductor silicon wafers and diamond through high thermal conductivity silver paste was realized in this paper. The surface was coated with a metal film to enhance the diffusion of solid atoms at the interface. The commercial silver paste was sintered at a low temperature of about 200℃ to obtain an uniform connection interface of diamond-silicon bonding. The calculated porosity is about 9.6%, and the equivalent thermal resistance of the middle-sintered silver layer is about 1.38×10-5 m2•K/W.

AB - The low-temperature and low-pressure sintering technology for connecting large-area (> 100 mm2) semiconductor silicon wafers and diamond through high thermal conductivity silver paste was realized in this paper. The surface was coated with a metal film to enhance the diffusion of solid atoms at the interface. The commercial silver paste was sintered at a low temperature of about 200℃ to obtain an uniform connection interface of diamond-silicon bonding. The calculated porosity is about 9.6%, and the equivalent thermal resistance of the middle-sintered silver layer is about 1.38×10-5 m2•K/W.

KW - Chip heat dissipation

KW - Diamond

KW - Large-size connection

KW - Low-temperature sintered silver

UR - https://www.scopus.com/pages/publications/85104378327

M3 - 文章

AN - SCOPUS:85104378327

SN - 1000-3819

VL - 41

SP - 65

EP - 68

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

导热金刚石同大尺寸芯片的低温烧结银连接工艺

Abstract

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