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基体偏压对高功率脉冲磁控溅射CrN薄膜结构及阻氢性能的影响

Translated title of the contribution: Effect of Substrate Bias on Structure and Hydrogen Resistance of CrN Thin Films Prepared by High Power Pulsed Magnetron Sputtering
  • Hui Zhang
  • , Xiaobo Wang
  • , Weixin Zhang
  • , Chunzhi Gong*
  • , Xiubo Tian
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Hydrogen diffuses in the form of atoms in metal materials, while in the form of molecules in ceramic materials, and its permeability is relatively low compared with that of metal materials. Therefore, a layer of ceramic film can be sputtered on the surface of metal materials to reduce the diffusion coefficient of hydrogen, thus playing the effect of protecting the matrix material. In this paper, high power pulse magnetron sputtering technique was used to sputter CrN films on a 316L stainless steel substrate. Under the control of substrate bias voltage of 100, 200, 300 and 400 V, respectively, for 60 min, the hydride inhibition rate of the four groups of CrN films is more than 75%, and the maximum is 94.8%. Compared with 316L stainless steel, the hydrogen diffusion coefficient of CrN is three orders lower. In addition, in view of the problem that the hydrogen resistance of the nitride film will decrease due to the oxidation reaction to form other compounds at high temperature, this paper verified the high temperature oxidation resistance of the film at 600℃ and in the atmosphere of pure oxygen. The results show that under the same conditions, the weight gain of oxygen in the prepared CrN hydrogen⁃inhibiting film is only 50% of that of 316L stainless steel substrate, and it has excellent oxidation resistance.

Translated title of the contributionEffect of Substrate Bias on Structure and Hydrogen Resistance of CrN Thin Films Prepared by High Power Pulsed Magnetron Sputtering
Original languageChinese (Traditional)
Pages (from-to)1046-1052
Number of pages7
JournalZhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology
Volume41
Issue number11
DOIs
StatePublished - Nov 2021

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