β-Ga₂O₃的 p 型掺杂研究进展

β-Ga₂O₃ has many advantages such as wide bandgap，high breakdown field strength，and high Baliga's figure of merit，making it an emerging semiconductor material with great potential for high-power electronic devices，gas sensors，and solar-blind ultraviolet detectors. However，the challenge of achieving p-type doping poses a major obstacle to the development of β-Ga₂O₃. Firstly，the advantages of β-Ga₂O₃ have been outlined briefly，and its structure and basic properties have been introduced as well. Secondly，the effect of the intrinsic defects of β-Ga₂O₃ on electrical conductivity has been discussed detailed，especially，for the oxygen vacancy. And then，the current research status of p-type doping in β-Ga₂O₃ has been discussed including N，Mg，Zn and other acceptor elements doping，co-doping with two elements and other methods. Additionally，the reasons for difficulty in p-type doping have been presented.