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Dive into the research topics where Zhongli Liu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Degradation Patterns of Total Ionizing Dose Effects in SiGe HBTs Based on Forward and Inverse Operations
Geng, H., Liu, F., Wang, K., Wu, B., Wu, L., Yang, J., Zhang, P., Liu, Z., Shao, W. & Li, X., 2026, In: IEEE Transactions on Nuclear Science. 73, 2, p. 348-354 7 p.Research output: Contribution to journal › Article › peer-review
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Simulation of the Single Event Burnout in Lateral Enhancement mode β-Ga2O3 MOSFET Devices
Wang, Z., Liu, F., Liu, Z., Cao, X., Xu, X., Bai, C., Yang, J. & Li, X., 2026, (Accepted/In press) In: IEEE Transactions on Device and Materials Reliability.Research output: Contribution to journal › Article › peer-review
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Single-Event Burnout Effect of Split-Gate-Trench MOSFET in Different Ion Angles
Liu, S., Wu, L., Wan, P., Liu, F., Xu, X., Xu, X., Liu, Z., Yang, J. & Li, X., 2026, (Accepted/In press) In: IEEE Transactions on Nuclear Science.Research output: Contribution to journal › Article › peer-review
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Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs
Wu, L., Liu, F., Dong, S., Wei, Y., Xu, X., Liu, Z., Yang, J. & Li, X., 2025, In: IEEE Transactions on Electron Devices. 72, 7, p. 3489-3496 8 p.Research output: Contribution to journal › Article › peer-review
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Depth profile of trap concentration induced by heavy ion irradiation in 4H-SiC Schottky barrier diode
Yu, X., Xu, X., Jiang, H., Wu, L., Liu, F., Li, W., Liu, Z., Geng, H., Yang, J. & Li, X., 14 Jul 2025, In: Applied Physics Letters. 127, 2, 023507.Research output: Contribution to journal › Article › peer-review
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