Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
-
SDG 7 Affordable and Clean Energy
Fingerprint
Dive into the research topics where Chaoming Liu is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
Radiation degradation mechanisms of GaInP/GaAs heterojunction solar cells following proton, electron and sequential irradiation
Zhao, K., Zhou, J., Kang, Q., Zhang, Y., Liu, Y., Li, X., Liu, C., Wang, T., Li, Z. & Huo, M., 15 Mar 2026, In: Solar Energy. 307, 114333.Research output: Contribution to journal › Article › peer-review
-
Synergistic Radiation Effect of 300 MeV Proton and Heavy Ion on Electrical Characteristics of β-Ga2O3 SBD
Zhang, Z., Liu, J., Xiao, Y., Liu, C., Shu, L., Zhang, Y., Qi, C., Ma, G., Huo, M., Xiao, L. & Wang, T., 2026, (Accepted/In press) In: IEEE Transactions on Nuclear Science.Research output: Contribution to journal › Article › peer-review
-
Catastrophic burnout mechanisms of NiO/β-Ga2O3 heterojunction diodes irradiated by 1.35 GeV high-energy heavy ions
Zhang, Z., Sun, N., Wang, T., Zhou, F., Liu, C., Liu, J., Lu, H., Huo, M., Xiao, L. & Ye, J., 22 Sep 2025, In: Applied Physics Letters. 127, 12, 122105.Research output: Contribution to journal › Article › peer-review
1 Link opens in a new tab Scopus citations -
Defect and electrical characteristics of 4H-SiC junction barrier Schottky diodes under high-energy electron irradiation at different fluences
Liu, W., Tang, Y., Liu, C., Hu, Z., Bai, Y., Tian, X., Li, X., Hao, J., Xiao, Y., Huo, M. & Liu, X., 1 Sep 2025, In: Journal of Physics D: Applied Physics. 58, 35, 355107.Research output: Contribution to journal › Article › peer-review
-
Effect of Split-Gate Structure in SiC MOSFET on Single-Event Gate Oxide Damage
Qiu, L., Bai, Y., Chen, Y., Xiao, Y., Ding, J., Tang, Y., Tian, X., Liu, C. & Liu, X., 2025, In: IEEE Transactions on Electron Devices. 72, 3, p. 1053-1059 7 p.Research output: Contribution to journal › Article › peer-review
2 Link opens in a new tab Scopus citations